Netherlands-based company Nexperia has recently announced the successful qualification of its 650V, 10A silicon carbide (SiC) Schottky diode, known as PSC1065H-Q, for automotive use. Additionally, it is now available in real-two-pin (R2P) DPAK (TO-252-2) packaging, making it a versatile component for electric vehicles (EVs) and other automobiles.
This innovative diode has been specifically designed to address the challenges presented by high voltage and high current applications, including switched-mode power supplies, AC-DC and DC-DC converters, battery charging infrastructure, motor drives, uninterruptible power supplies, and photovoltaic inverters.
A key feature of this diode is its merged PiN Schottky (MPS) structure, which enhances its robustness against surge currents, eliminating the need for additional protection circuitry. This not only simplifies system complexity, but also enables hardware designers to achieve higher efficiency with more compact form factors in challenging high-power applications.
Nexperia has further enhanced the diode’s capabilities through the use of “thin SiC” technology, which delivers a substrate that is one-third of its original thickness. This reduction in thickness results in lower operating temperatures, higher reliability and device lifetime, higher surge current capability, and lower forward voltage drop.
According to Katrin Feurle, Senior Director and Head of Product Group SiC Diodes & FETs at Nexperia, the superior reverse recovery of these diodes translates to high efficiency in real-world use. She also expressed her excitement about the fact that this is the company’s first automotive-qualified product, which has already gained recognition from major automotive players for its exceptional performance and reliability.
This breakthrough in SiC diode technology is a significant advancement for the automotive industry, offering new opportunities to enhance the efficiency, reliability, and overall performance of electric vehicles and related applications.
In conclusion, Nexperia’s automotive-qualified 650V SiC diode represents a major achievement in the realm of high voltage and high current applications in the automotive sector. Its innovative design and advanced technology have garnered attention for its potential to enhance the efficiency and reliability of EVs and other automobiles, pointing towards a promising future for the integration of SiC diodes in automotive electronics.
Source:
Nexperia